Traveling-wave-type LN modulator structures, which achieve a low driving voltage and a large bandwidth, have been presented. As a result, under the velocity match conditions, a higher performance LN modulator can be obtained by utilizing a wider gap or a thinner buffer layer for the ridged z-cut LN substrate, and by utilizing a wider center electrode or a narrower gap for the thinned x-cut LN substrate. These LN modulators are expected to have a sufficient capability for use in millimeter-wave-band optoelectronic systems.


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    Title :

    Low-driving-voltage LiNbO/sub 3/ optical modulators with millimeter-wave bandwidths


    Contributors:
    Mitomi, O. (author)


    Publication date :

    2005-01-01


    Size :

    120051 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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