Traveling-wave-type LN modulator structures, which achieve a low driving voltage and a large bandwidth, have been presented. As a result, under the velocity match conditions, a higher performance LN modulator can be obtained by utilizing a wider gap or a thinner buffer layer for the ridged z-cut LN substrate, and by utilizing a wider center electrode or a narrower gap for the thinned x-cut LN substrate. These LN modulators are expected to have a sufficient capability for use in millimeter-wave-band optoelectronic systems.


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    Titel :

    Low-driving-voltage LiNbO/sub 3/ optical modulators with millimeter-wave bandwidths


    Beteiligte:
    Mitomi, O. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    120051 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Low-Driving-Voltage LiNbO~3 Optical Modulators with Millimeter-Wave Bandwidths

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005



    Millimeter-Wave Ti:LiNbO~3 Optical Modulators

    Noguchi, K. / Mitomi, O. / Miyazawa, H. | British Library Online Contents | 1998


    X-Cut LiNbO~3 Optical SSB Modulators

    Higuma, K. / Hashimoto, Y. / Nagata, H. et al. | British Library Conference Proceedings | 2001


    X-cut LiNbO/sub 3/ optical SSB modulators

    Higuma, K. / Hashimoto, Y. / Nagata, H. et al. | IEEE | 2001