Traveling-wave-type LN modulator structures, which achieve a low driving voltage and a large bandwidth, have been presented. As a result, under the velocity match conditions, a higher performance LN modulator can be obtained by utilizing a wider gap or a thinner buffer layer for the ridged z-cut LN substrate, and by utilizing a wider center electrode or a narrower gap for the thinned x-cut LN substrate. These LN modulators are expected to have a sufficient capability for use in millimeter-wave-band optoelectronic systems.
Low-driving-voltage LiNbO/sub 3/ optical modulators with millimeter-wave bandwidths
01.01.2005
120051 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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