Summary form only given. Arsenide-antimonide mixed group-V compounds are very attractive as materials for AlAsSb distributed Bragg reflectors (DBRs). Grown lattice-matched on InP, such DBRs, thanks primarily to the low refractive index of AlAsSb, would allow the monolithic growth of long-wavelength vertical cavity surface emitting lasers (VCSELs) with relatively few periods compared to traditional InP-InGaAsP DBRs.


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    Title :

    AlAsSb-based distributed Bragg reflectors for 1.55 /spl mu/m VCSELs using InAlGaAs as high-index layer


    Contributors:
    Hall, E. (author) / Kim, J. (author) / Naone, R. (author) / Kroemer, H. (author) / Coldren, L.A. (author)


    Publication date :

    1998-01-01


    Size :

    237365 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    AlAsSb-Based Distributed Bragg Reflectors for 1.55m VCSELs Using InAlGaAs as High-Index Layer

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998



    Vertical Cavity Surface Emitting Laser Emitting at 1.56 Microns with AlGaAsSb/AlAsSb Distributed Bragg Reflectors

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    1.55-mum Bottom-Emitting InAlGaAs VCSELs with Al~2O~3/a-Si Thin-Film Pairs as a Top Mirror

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004