Summary form only given. Arsenide-antimonide mixed group-V compounds are very attractive as materials for AlAsSb distributed Bragg reflectors (DBRs). Grown lattice-matched on InP, such DBRs, thanks primarily to the low refractive index of AlAsSb, would allow the monolithic growth of long-wavelength vertical cavity surface emitting lasers (VCSELs) with relatively few periods compared to traditional InP-InGaAsP DBRs.


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    Titel :

    AlAsSb-based distributed Bragg reflectors for 1.55 /spl mu/m VCSELs using InAlGaAs as high-index layer


    Beteiligte:
    Hall, E. (Autor:in) / Kim, J. (Autor:in) / Naone, R. (Autor:in) / Kroemer, H. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    237365 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    AlAsSb-Based Distributed Bragg Reflectors for 1.55m VCSELs Using InAlGaAs as High-Index Layer

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998



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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997



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