Long-wavelength vertical cavity surface emitting lasers (VCSELs) are attractive for a variety of application, such as low cost sources for optical communications and optical interconnects. In order to realize a monolithic device, we have utilized an AlGaAsSb-AlAsSb material system lattice matched to InP as a means of forming highly reflecting distributed Bragg reflectors (DBRs) with relatively few mirror pairs. The structure was grown by molecular beam epitaxy.
Vertical cavity surface emitting laser emitting at 1.56 microns with AlGaAsSb/AlAsSb distributed Bragg reflectors
01.01.1997
152447 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1997
|AlAs/AlGaAs distributed Bragg reflectors for vertical-cavity surface-emitting lasers [3211-14]
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