Analysis of data from VCSELs with different d/sub 2/ proton implant diameters indicate the presence of both dominant surface recombination occurring at the intersection of the deep proton implant and the active layer, and smaller bulk recombination occurring in the active layer under the laser aperture.
Electrical characteristics of proton bombarded GaAs vertical-cavity-surface-emitting lasers
1998-01-01
115934 byte
Conference paper
Electronic Resource
English
Electrical Characteristics of Proton Bombarded GaAs Vertical-Cavity-Surface-Emitting Lasers
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