Analysis of data from VCSELs with different d/sub 2/ proton implant diameters indicate the presence of both dominant surface recombination occurring at the intersection of the deep proton implant and the active layer, and smaller bulk recombination occurring in the active layer under the laser aperture.


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    Title :

    Electrical characteristics of proton bombarded GaAs vertical-cavity-surface-emitting lasers


    Contributors:


    Publication date :

    1998-01-01


    Size :

    115934 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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