Analysis of data from VCSELs with different d/sub 2/ proton implant diameters indicate the presence of both dominant surface recombination occurring at the intersection of the deep proton implant and the active layer, and smaller bulk recombination occurring in the active layer under the laser aperture.


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    Titel :

    Electrical characteristics of proton bombarded GaAs vertical-cavity-surface-emitting lasers


    Beteiligte:


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    115934 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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