Analysis of data from VCSELs with different d/sub 2/ proton implant diameters indicate the presence of both dominant surface recombination occurring at the intersection of the deep proton implant and the active layer, and smaller bulk recombination occurring in the active layer under the laser aperture.
Electrical characteristics of proton bombarded GaAs vertical-cavity-surface-emitting lasers
01.01.1998
115934 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Electrical Characteristics of Proton Bombarded GaAs Vertical-Cavity-Surface-Emitting Lasers
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