10 W peak-pulsed power emitted in a beam pattern 2/spl times/diffraction limit is obtained from a 40-element, 200 /spl mu/m-aperture Al-free phase-locked antiguided array (/spl lambda/=0.98 /spl mu/m). 60% of the power resides in the central lobe, and the differential quantum efficiency is 54 % for 1 mm-long devices. The devices were fabricated by a two stage self-aligned etch-and-regrowth process. In the first stage, the strained InGaAs double quantum well (DQW) active region and GaAs guide layer were grown by low-pressure MOCVD. High-index GaAs material was then selectively removed to define the element regions, after which the p-InGaP cladding and GaAs contact layers were regrown.


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    Title :

    10 W near-diffraction-limited pulsed power from Al-free phase-locked antiguided arrays


    Contributors:
    Yang, H. (author) / Mawst, L.J. (author) / Nesnidal, M. (author) / Lopez, J. (author) / Bhattacharya, A. (author) / Botez, D. (author)


    Publication date :

    1996-01-01


    Size :

    122124 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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