10 W peak-pulsed power emitted in a beam pattern 2/spl times/diffraction limit is obtained from a 40-element, 200 /spl mu/m-aperture Al-free phase-locked antiguided array (/spl lambda/=0.98 /spl mu/m). 60% of the power resides in the central lobe, and the differential quantum efficiency is 54 % for 1 mm-long devices. The devices were fabricated by a two stage self-aligned etch-and-regrowth process. In the first stage, the strained InGaAs double quantum well (DQW) active region and GaAs guide layer were grown by low-pressure MOCVD. High-index GaAs material was then selectively removed to define the element regions, after which the p-InGaP cladding and GaAs contact layers were regrown.
10 W near-diffraction-limited pulsed power from Al-free phase-locked antiguided arrays
01.01.1996
122124 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
10 W Near-Diffraction-Limited Pulsed Power from Al-Free Phase- Locked Antiguided Arrays
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