In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.


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    Title :

    Etching of oxide semiconductors by ultrashort laser pulses


    Contributors:
    Ruthe, D. (author) / Zimmer, K. (author)


    Publication date :

    2003-01-01


    Size :

    76168 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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