In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.
Etching of oxide semiconductors by ultrashort laser pulses
01.01.2003
76168 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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