In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.


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    Titel :

    Etching of oxide semiconductors by ultrashort laser pulses


    Beteiligte:
    Ruthe, D. (Autor:in) / Zimmer, K. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    76168 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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