A novel /spl delta/-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer high electron mobility transistor (TRST-HEMT) has been successfully fabricated by low-pressure metal organic chemical vapor deposition. Three-terminal N-shaped negative differential resistance (NDR) phenomenon due to the hot electrons real-space transfer (RST) at high electric field is observed. Two-terminal gate-to-drain breakdown voltage is more than 40 V. High three-terminal on-state breakdown voltage as high as 19.2 V and broad plateau of current valley as high as 15 V are achieved.
High breakdown InGaP/InGaAs tunneling real space transfer HEMT
2002-01-01
185929 byte
Conference paper
Electronic Resource
English
High Breakdown InGaP/InGaAs Tunneling Real Space Transfer HEMT
British Library Conference Proceedings | 2002
|High Power, Efficient Al-Free InGaAs/InGaP/GaAs Diode Lasers
British Library Conference Proceedings | 1996
|An InGaP/InGaAs/GaAs Double Channel Pseudomorphic High Electron Mobility Transistor (DC-PHEMT)
British Library Conference Proceedings | 2002
|Strain-compensated InGaAs/GaAsP/InGaP laser (Invited Paper) [3004-05]
British Library Conference Proceedings | 1997
|