The asymmetric design of a semiconductor laser structure presented in this paper is based on the extension of the near field in the vertical direction (growth direction) preferentially on the n-side of the structure. P-type layers show lower mobility and higher optical losses than n-type layers. Thus the series resistance of the device and the internal losses would benefit from this approach. The vertical spot size is 0.8 /spl mu/m, making the structures also suitable for high power operation. We give the refractive index profile and optical field distribution in the asymmetric structures.


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    Title :

    Asymmetric design of semiconductor laser diodes: thin p-clad and low divergence InGaAs/AlGaAs/GaAs devices


    Contributors:
    Buda, M. (author) / Hay, J. (author) / Tan, H.H. (author) / Wong-Leung, J. (author) / Jagadish, C. (author)


    Publication date :

    2002-01-01


    Size :

    115597 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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