The asymmetric design of a semiconductor laser structure presented in this paper is based on the extension of the near field in the vertical direction (growth direction) preferentially on the n-side of the structure. P-type layers show lower mobility and higher optical losses than n-type layers. Thus the series resistance of the device and the internal losses would benefit from this approach. The vertical spot size is 0.8 /spl mu/m, making the structures also suitable for high power operation. We give the refractive index profile and optical field distribution in the asymmetric structures.


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    Titel :

    Asymmetric design of semiconductor laser diodes: thin p-clad and low divergence InGaAs/AlGaAs/GaAs devices


    Beteiligte:
    Buda, M. (Autor:in) / Hay, J. (Autor:in) / Tan, H.H. (Autor:in) / Wong-Leung, J. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    115597 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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