This paper presents the device properties of single mode distributed feedback lasers based on InGaAs/GaAs quantum dots in a well design. This laser structure was grown by solid source molecular beam epitaxy. With this improved quantum dot DFB laser with shorter facet-coated cavities a significant improvement in the dynamic properties is achieved.


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    Title :

    1.3 gm Quantum dot distributed feedback lasers based on an asymmetric InAs/GaInAs dots-in-a-well design


    Contributors:
    Deubert, S. (author) / Krebs, R. (author) / Reithmaier, J.P. (author) / Forchel, A. (author)


    Publication date :

    2003-01-01


    Size :

    81330 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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