Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Hole capture rate of GaInAs/InP strained quantum-well lasers


    Contributors:
    Hirayama, H. (author) / Asada, M. (author)


    Publication date :

    1994-01-01


    Size :

    S719



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    Unknown


    Classification :

    DDC:    537.5



    1200 nm highly strained GaInAs/GaAs surface emitting lasers

    Koyama, F. / Miyamoto, T. / Arai, M. et al. | IEEE | 2002


    WFF5 1.23mum Long Wavelength Highly Strained GaInAs/GaAs Quantum Well Laser

    IEEE | British Library Conference Proceedings | 2002


    TuS2 1200 nm Highly Strained GaInAs/GaAs Surface Emitting Lasers

    IEEE | British Library Conference Proceedings | 2002


    1.23 /spl mu/m long wavelength highly strained GaInAs/GaAs quantum well laser

    Kondo, T. / Arai, M. / Onomura, A. et al. | IEEE | 2002


    Physics of Strained Quantum Well Lasers

    Loehr | Online Contents | 1998