Asymmetric InGaAs/InGaAlAs multiple quantum well structures containing three pairs of different well widths have been grown by MBE. P-type modulation-doping has been found to significantly improve the flatness of the remarkably broad photoluminescence spectrum.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Modulation-doped Asymmetric Multi-Quantum-Well Structures for Flat Broadband Gain Spectrum


    Contributors:
    Chen, C.Y. (author) / Feng, J.Y. (author) / Lin, E.Y. (author) / Lay, T.S. (author) / Chang, T.Y. (author)


    Publication date :

    2005-01-01


    Size :

    233718 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Asymmetric Multiple-Quantum-Well Heterostructures with a Wide Flat Amplification Spectrum

    Manak, I. S. / Kononenko, V. K. / Nalivko, S. V. et al. | British Library Conference Proceedings | 2005


    Gain Spectra Measurements in N-type Modulation Doped GaAs/AlGaAs Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994


    Broadband diffraction in a photorefractive asymmetric coupled quantum well structure

    Iwamoto, S. / Nishioka, M. / Someya, T. et al. | IEEE | 2001