Asymmetric InGaAs/InGaAlAs multiple quantum well structures containing three pairs of different well widths have been grown by MBE. P-type modulation-doping has been found to significantly improve the flatness of the remarkably broad photoluminescence spectrum.


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    Titel :

    Modulation-doped Asymmetric Multi-Quantum-Well Structures for Flat Broadband Gain Spectrum


    Beteiligte:
    Chen, C.Y. (Autor:in) / Feng, J.Y. (Autor:in) / Lin, E.Y. (Autor:in) / Lay, T.S. (Autor:in) / Chang, T.Y. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    233718 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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