Asymmetric InGaAs/InGaAlAs multiple quantum well structures containing three pairs of different well widths have been grown by MBE. P-type modulation-doping has been found to significantly improve the flatness of the remarkably broad photoluminescence spectrum.
Modulation-doped Asymmetric Multi-Quantum-Well Structures for Flat Broadband Gain Spectrum
01.01.2005
233718 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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