Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 /spl times/ 10/sup 4/ V/W for a 50 /spl times/ 50 /spl mu/m/sup 2/ photoconductor at a temperature of 200K. The measured responsivity shows good agreement with the modelled responsivity across the mid-wave infrared window (3-5 /spl mu/m). The measured responsivity is limited by surface recombination, which limits the effective lifetime to /spl ap/ 15ns. The optical cut-off of the detector varies with temperature as modelled. There is strong agreement between modelled peak responsivity and measured peak responsivity with varying temperature from 80-300K.
Responsivity and lifetime of resonant cavity enhanced HgCdTe detectors
2006 IEEE Aerospace Conference ; 9 pp.
2006-01-01
796345 byte
Conference paper
Electronic Resource
English
Resonant cavity enhanced HgCdTe detectors
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