Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 /spl times/ 10/sup 4/ V/W for a 50 /spl times/ 50 /spl mu/m/sup 2/ photoconductor at a temperature of 200K. The measured responsivity shows good agreement with the modelled responsivity across the mid-wave infrared window (3-5 /spl mu/m). The measured responsivity is limited by surface recombination, which limits the effective lifetime to /spl ap/ 15ns. The optical cut-off of the detector varies with temperature as modelled. There is strong agreement between modelled peak responsivity and measured peak responsivity with varying temperature from 80-300K.


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    Titel :

    Responsivity and lifetime of resonant cavity enhanced HgCdTe detectors


    Beteiligte:
    Wehner, J.G.A. (Autor:in) / Musca, C.A. (Autor:in) / Sewell, R.H. (Autor:in) / Dell, J.M. (Autor:in) / Faraone, L. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.2006


    Format / Umfang :

    796345 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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