Long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are strongly temperature sensitive. Room-temperature continuous-wave operation of those VCSELs has been achieved only recently. Here, we investigate pulsed operation of 1.55 /spl mu/m VCSELs with strain-compensated InGaAsP/InP multi quantum wells (MQWs). A comprehensive two-dimensional VCSEL model is used to investigate those temperature effects. The optical gain is obtained from kp band structure computations and it includes many-body effects. Temperature dependent loss mechanisms like Auger recombination, carrier leakage, and intervalence band absorption are considered. Careful adjustment of material parameters led to an excellent agreement with a large variety of measurements.
Analysis of temperature effects on 1.55 /spl mu/m vertical-cavity lasers
1997-01-01
154632 byte
Conference paper
Electronic Resource
English
Analysis of Temperature Effects on 1.55m Vertical-Cavity Lasers
British Library Conference Proceedings | 1997
|Loss Analysis of 1.55m Vertical Cavity Lasers
British Library Conference Proceedings | 1996
|Loss analysis of 1.55 /spl mu/m vertical cavity lasers
IEEE | 1996
|High-temperature 1.55-m vertical-cavity lasers through wafer fusion [3003-22]
British Library Conference Proceedings | 1997
|Undercut ridge structures: a novel approach to 1.3/1.55 m vertical-cavity surface-emitting lasers
British Library Conference Proceedings | 1997
|