Recently, room temperature cw operation of 1.55 μm InGaAsP MQW DBR VCSELs has been achieved for the first time. At higher temperatures, laser operation is restricted by internal losses including intervalenceband absorption and carrier leakage. Measured characteristics are simulated using a comprehensive numerical model to analyze those losses in detail and to optimize the VCSEL design.


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    Title :

    Loss analysis of 1.55 /spl mu/m vertical cavity lasers


    Contributors:
    Piprek, J. (author) / Babic, D.I. (author) / Margalit, N.M. (author) / Bowers, J.E. (author)


    Publication date :

    1996-01-01


    Size :

    152294 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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