We describe the theoretical analysis and calculations of the 980nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500mw in a single transverse mode.


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    Title :

    High Power Diode Pumped Vertical Externalcavity Surface-emitting Lasers (VECSELS)


    Contributors:
    Lu, G.G. (author) / He, C.F. (author) / Shan, X.N. (author) / Qin, L. (author) / Yan, C.L. (author) / Ning, Y.Q. (author) / Wang, L.J. (author)


    Publication date :

    2006-09-01


    Size :

    1126641 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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