A new ECTT-DHPT with InGaAsP(¿=1.55¿m) as base and InGaAsP(¿=1.3¿m) as collector as well as waveguide was designed and fabricated, the DC characteristics reveal that the ECTT-DHPT can perform good optoelectronic mix operation and linear amplification operation by optically biased at two appropriate value respectively. Responsivity of more than 52A/W and dark current of 70nA (when Vce=1V) were obtained.


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    Title :

    A New Edge-Coupled Two-Terminal Double Heterojunction Phototransistor (ECTT-DHPT) and Its DC Characteristics


    Contributors:
    Wang, L. S. (author) / Zhao, L. J. (author) / Pan, J. Q. (author) / Zhang, W. (author) / Wang, H. (author) / Liang, S. (author) / Zhu, H. L. (author) / Wang, W. (author)


    Publication date :

    2008-12-01


    Size :

    209524 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English