In this paper, theoretical results on the dependence of the single-photon quantum efficiency (SPQE) on the type of material of the multiplication region (MR) as well as its structure and width are presented. We consider SPADs with hole-injection InP MRs, electron-injection In/sub 0.52/Al/sub 0.48/As MRs, and hole-injection In/sub 0.52/Al/sub 0.48/As-InP heterojunction I/sup 2/E MRs. The model uses generalized breakdown probabilities based on the hard-threshold dead-space multiplication theory. The main mechanism for dark-carrier generation considered in this paper is tunneling current, which dominates other sources of dark carriers at the high electric fields beyond breakdown.


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    Title :

    Detection efficiencies for InP, InAlAs, and InAlAs-InP single-photon avalanche photodiodes


    Contributors:
    Ramirez, D.A. (author) / Hayat, M.M. (author) / Karve, G. (author) / Campbell, J.C. (author) / Torres, S.N. (author) / Saleh, B.E.A. (author) / Teich, M.C. (author)


    Publication date :

    2005-01-01


    Size :

    105862 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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