In this paper, theoretical results on the dependence of the single-photon quantum efficiency (SPQE) on the type of material of the multiplication region (MR) as well as its structure and width are presented. We consider SPADs with hole-injection InP MRs, electron-injection In/sub 0.52/Al/sub 0.48/As MRs, and hole-injection In/sub 0.52/Al/sub 0.48/As-InP heterojunction I/sup 2/E MRs. The model uses generalized breakdown probabilities based on the hard-threshold dead-space multiplication theory. The main mechanism for dark-carrier generation considered in this paper is tunneling current, which dominates other sources of dark carriers at the high electric fields beyond breakdown.


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    Titel :

    Detection efficiencies for InP, InAlAs, and InAlAs-InP single-photon avalanche photodiodes


    Beteiligte:
    Ramirez, D.A. (Autor:in) / Hayat, M.M. (Autor:in) / Karve, G. (Autor:in) / Campbell, J.C. (Autor:in) / Torres, S.N. (Autor:in) / Saleh, B.E.A. (Autor:in) / Teich, M.C. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    105862 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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