We compared the performance of proton implanted GaAs and LT-GaAs for the detection of millimetre waves by photoconductive sampling. We found that the proton-implanted GaAs detector produces a 7 dB better signal to noise ratio than the LT-GaAs detector. The short carrier lifetime makes proton-damaged GaAs an attractive material for terahertz applications.
Detection of sub-terahertz radiation using proton implanted GaAs
1999-01-01
167777 byte
Conference paper
Electronic Resource
English
Detection of sub-terahertz radiation using proton implanted GaAs
British Library Conference Proceedings | 1999
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