We compared the performance of proton implanted GaAs and LT-GaAs for the detection of millimetre waves by photoconductive sampling. We found that the proton-implanted GaAs detector produces a 7 dB better signal to noise ratio than the LT-GaAs detector. The short carrier lifetime makes proton-damaged GaAs an attractive material for terahertz applications.


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    Title :

    Detection of sub-terahertz radiation using proton implanted GaAs


    Contributors:
    Wong, C.S. (author) / Tsang, H.K. (author)


    Publication date :

    1999-01-01


    Size :

    167777 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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