Summary form only given. Optically-excited terahertz (THz) radiation from unbiased semiconductors have been an important field of ultrafast optoelectronics since its discovery a few years ago. In this work, we report for the first time measurement of THz radiation from unbiased, as-implanted and post-annealed GaAs:As/sup +/ samples. The effect of thermal annealing time on depletion field, effective carrier mobility, as well as the peak THz radiating frequency of unbiased GaAs:As/sup +/ are investigated.


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    Title :

    Characterization of arsenic-ion-implanted GaAs by optically excited terahertz radiation


    Contributors:
    Gong-Ru Lin (author) / Ci-Ling Pan (author) / Wu, Q. (author) / Zhang, X.-C. (author)


    Publication date :

    1997-01-01


    Size :

    187786 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Characterization of Arsenic-ion-implanted GaAS by Optically Excited Terahertz Radiation

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997



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