Summary form only given. Optically-excited terahertz (THz) radiation from unbiased semiconductors have been an important field of ultrafast optoelectronics since its discovery a few years ago. In this work, we report for the first time measurement of THz radiation from unbiased, as-implanted and post-annealed GaAs:As/sup +/ samples. The effect of thermal annealing time on depletion field, effective carrier mobility, as well as the peak THz radiating frequency of unbiased GaAs:As/sup +/ are investigated.
Characterization of arsenic-ion-implanted GaAs by optically excited terahertz radiation
1997-01-01
187786 byte
Conference paper
Electronic Resource
English
Characterization of Arsenic-ion-implanted GaAS by Optically Excited Terahertz Radiation
British Library Conference Proceedings | 1997
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