Both uniform temperature distribution and crowded temperature distribution for a large-geometry power transistor are studied. Different concepts are used for calculating these two types of temperature distribution. In the first instance, in order to calculate the uniform temperature distribution, it is assumed that the power is uniformly dissipated over the entire emitter surface. In the second instance, in calculating the crowded temperature distribution, the power dissipation is assumed to be concentrated at the edges of the emitter. The time-dependent diffusion equation is solved to calculate the temperature rises in these two cases.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Temperature Analysis of Current Crowded Effect in Power Transistors


    Contributors:

    Published in:

    Publication date :

    1971-11-01


    Size :

    570654 byte




    Type of media :

    Article (Journal)


    Type of material :

    Electronic Resource


    Language :

    English



    What crowded skies?

    Online Contents | 1998


    MONITORING CROWDED TRAFFIC SCENES

    Maurin, B. / Masoud, O. / Papanikolopoulos, N. et al. | British Library Conference Proceedings | 2002


    Safety Poster - Crowded Skies

    Online Contents | 2004


    Monitoring crowded traffic scenes

    Maurin, B. / Masoud, O. / Papanikolopoulos, N. | IEEE | 2002


    Pedestrian detection in crowded scenes

    Leibe, B. / Seemann, E. / Schiele, B. | IEEE | 2005