Both uniform temperature distribution and crowded temperature distribution for a large-geometry power transistor are studied. Different concepts are used for calculating these two types of temperature distribution. In the first instance, in order to calculate the uniform temperature distribution, it is assumed that the power is uniformly dissipated over the entire emitter surface. In the second instance, in calculating the crowded temperature distribution, the power dissipation is assumed to be concentrated at the edges of the emitter. The time-dependent diffusion equation is solved to calculate the temperature rises in these two cases.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Temperature Analysis of Current Crowded Effect in Power Transistors


    Beteiligte:
    Wang, Paul P. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1971-11-01


    Format / Umfang :

    570654 byte




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    What crowded skies?

    Online Contents | 1998


    MONITORING CROWDED TRAFFIC SCENES

    Maurin, B. / Masoud, O. / Papanikolopoulos, N. et al. | British Library Conference Proceedings | 2002


    Safety Poster - Crowded Skies

    Online Contents | 2004


    Monitoring crowded traffic scenes

    Maurin, B. / Masoud, O. / Papanikolopoulos, N. | IEEE | 2002


    Pedestrian detection in crowded scenes

    Leibe, B. / Seemann, E. / Schiele, B. | IEEE | 2005