Summary form only given. In conclusion although we observe the QCSE in GaAs/AlAs MQW modulators for barriers as thin as 10 /spl Aring/, optimum electroabsorption for smart pixels is found for 20-30 /spl Aring/ barrier width.<>


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Electroabsorption in ultranarrow-barrier GaAs/AlAs multiple quantum well modulators


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    160453 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Electroabsorption in Ultranarrow-Barrier GaAs/AlAs Multiple Quantum Well Modulators

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Optimization of Multiple Quantum Well Electroabsorption Modulators

    Si, W. / Li, D. / Zhang, K. | British Library Online Contents | 1993


    Dynamic range of traveling-wave multiple-quantum-well electroabsorption modulators

    Bin Liu, / Jongin Shim, / Yi-jen Chiu, et al. | IEEE | 2003


    Performance of Strained InGaAs/InAlAs Multiple-Quantum-Well Electroabsorption Modulators

    Ido, T. / Sano, H. / Tanaka, S. et al. | British Library Online Contents | 1996