We report the design and operation of InGaAs/GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by an atmospheric pressure metalorganic chemical vapor deposition (MOCVD) three-step selective-area growth process.


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    Title :

    InGaAs/GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD


    Contributors:
    Lammert, R.M. (author) / Forbes, D.V. (author) / Smith, G.M. (author) / Osowski, M.L. (author) / Coleman, J.J. (author)


    Publication date :

    1995-01-01


    Size :

    203333 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English