We report the design and operation of InGaAs/GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by an atmospheric pressure metalorganic chemical vapor deposition (MOCVD) three-step selective-area growth process.
InGaAs/GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD
01.01.1995
203333 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1995
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