We have demonstrated what we believe to be the first anisotropic electro-absorption in a strained In/sub 0.13/Ga/sub 0.87/As/GaAs MQW modulator structure grown on vicinal [110] GaAs substrates. This novel effect could provide a useful characteristic for optical signal processing. The results reported here may lead to the design of a whole new class of polarization-sensitive light modulators.<>


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    Title :

    Polarization dependent electro-absorption in (In,Ga)As/GaAs strained multiple quantum well modulator grown on [110] GaAs


    Contributors:
    Sun, D. (author) / Towe, E. (author) / Hayduk, M. (author) / Boncek, R.K. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    124865 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English