We have demonstrated what we believe to be the first anisotropic electro-absorption in a strained In/sub 0.13/Ga/sub 0.87/As/GaAs MQW modulator structure grown on vicinal [110] GaAs substrates. This novel effect could provide a useful characteristic for optical signal processing. The results reported here may lead to the design of a whole new class of polarization-sensitive light modulators.<>
Polarization dependent electro-absorption in (In,Ga)As/GaAs strained multiple quantum well modulator grown on [110] GaAs
Proceedings of LEOS '93 ; 504-505
1993-01-01
124865 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1993
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