We describe a new design to achieve the 1.55-/spl mu/m intersubband transition (ISBT) in Al/sub x/Ga/sub 1-x/N/GaN materials under the existence of a built-in field. We also show that this new design is effective to process ultrashort optical pulses in a waveguide configuration.


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    Title :

    Interminiband transition in AlGaN/GaN superlattice for 1.55-/spl mu/m ultrafast optical switches


    Contributors:
    Suzuki, N. (author) / Iizuka, N. (author)


    Publication date :

    1999-01-01


    Size :

    125843 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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