We describe a new design to achieve the 1.55-/spl mu/m intersubband transition (ISBT) in Al/sub x/Ga/sub 1-x/N/GaN materials under the existence of a built-in field. We also show that this new design is effective to process ultrashort optical pulses in a waveguide configuration.
Interminiband transition in AlGaN/GaN superlattice for 1.55-/spl mu/m ultrafast optical switches
1999-01-01
125843 byte
Conference paper
Electronic Resource
English
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