We designed a 10 Gb/s driver IC for direct modulation of VCSEL (vertical-cavity surface-emitting laser) diodes, using InGaP/GaAs heterojunction bipolar transistor technology with a cut-off frequency of 45 GHz and an emitter area of 6 /spl mu/m/sup 2/. The fiber launched optical output signal of the VCSEL driven by the fabricated driver IC exhibits rise/fall times of 54.3/68.6 psec and a controllable extinction ratio at a 3.3 V supply voltage with 250 mV/sub pp/ input data sequence. The driver IC consumes a small power of 65 mW as well.
A low-power-consumption VCSEL driver IC for 10 Gb/s direct modulation using InGaP/GaAs HBT
2003-01-01
113793 byte
Conference paper
Electronic Resource
English
A low power consumption VCSEL driver IC for 10Gb/s direct modulation using InGaP/GaAs HBT
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