We designed a 10 Gb/s driver IC for direct modulation of VCSEL (vertical-cavity surface-emitting laser) diodes, using InGaP/GaAs heterojunction bipolar transistor technology with a cut-off frequency of 45 GHz and an emitter area of 6 /spl mu/m/sup 2/. The fiber launched optical output signal of the VCSEL driven by the fabricated driver IC exhibits rise/fall times of 54.3/68.6 psec and a controllable extinction ratio at a 3.3 V supply voltage with 250 mV/sub pp/ input data sequence. The driver IC consumes a small power of 65 mW as well.


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    Title :

    A low-power-consumption VCSEL driver IC for 10 Gb/s direct modulation using InGaP/GaAs HBT


    Contributors:
    Ji Young Eo, (author) / Saekyoung Kang, (author) / Hyo-Hoon Park, (author) / Jung, D.Y. (author) / Park, C.S. (author) / Yoon, K.S. (author)


    Publication date :

    2003-01-01


    Size :

    113793 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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