We designed a 10 Gb/s driver IC for direct modulation of VCSEL (vertical-cavity surface-emitting laser) diodes, using InGaP/GaAs heterojunction bipolar transistor technology with a cut-off frequency of 45 GHz and an emitter area of 6 /spl mu/m/sup 2/. The fiber launched optical output signal of the VCSEL driven by the fabricated driver IC exhibits rise/fall times of 54.3/68.6 psec and a controllable extinction ratio at a 3.3 V supply voltage with 250 mV/sub pp/ input data sequence. The driver IC consumes a small power of 65 mW as well.


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    Titel :

    A low-power-consumption VCSEL driver IC for 10 Gb/s direct modulation using InGaP/GaAs HBT


    Beteiligte:
    Ji Young Eo, (Autor:in) / Saekyoung Kang, (Autor:in) / Hyo-Hoon Park, (Autor:in) / Jung, D.Y. (Autor:in) / Park, C.S. (Autor:in) / Yoon, K.S. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    113793 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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