High quality InN films were grown by rf-plasma assisted molecular beam epitaxy. The fundamental bandgap was evaluated to be 0.7 eV. The room temperature photoluminescence (PL) intensity was improved with the narrow PL-FWHM of 88 meV by optimizing the V/III supply ratio and buffer layer. This result suggests that InN is a new attractive material for optical devices in the optical communication wavelength.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel materials for optical communication


    Contributors:
    Kawai, M. (author) / Kikuchi, A. (author) / Kishino, K. (author)


    Publication date :

    2003-01-01


    Size :

    81157 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel material for optical communication

    Kawai, M. / Kikuchi, A. / Kishino, K. et al. | British Library Conference Proceedings | 2003



    High-quality red laser material grown by solid-source molecular beam epitaxy

    Toikkanen, L.J. / Tukiainen, A.K. / Hirvonen, I.A.T. et al. | IEEE | 2003



    GeSn on Si photodetectors grown by molecular beam epitaxy

    Su, S. J. / Xue, C. L. / Cheng, B. W. et al. | IEEE | 2011