High quality InN films were grown by rf-plasma assisted molecular beam epitaxy. The fundamental bandgap was evaluated to be 0.7 eV. The room temperature photoluminescence (PL) intensity was improved with the narrow PL-FWHM of 88 meV by optimizing the V/III supply ratio and buffer layer. This result suggests that InN is a new attractive material for optical devices in the optical communication wavelength.
High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel materials for optical communication
2003-01-01
81157 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2003
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