We successfully fabricated high-performance oxide-confined red VCSELs. A low threshold current of 0.5 mA and an extremely high maximum CW lasing temperature of 75C were achieved with a room-temperature lasing wavelength of 666 nm. This low-threshold and high-temperature operation was realized, because the oxide-confined structure is advantageous for making smaller devices, compared to the proton-implanted structure.
High-temperature operation and thermal analysis of InGaAlP-based oxide-confined red VCSELs
2002-01-01
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Conference paper
Electronic Resource
English
High-Temperature Operation and Thermal Analysis of InGaAlP-Based Oxide-Confined Red VCSELs
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