We demonstrate here the MBE growth of GaAs-AlAs /spl lambda//4 Bragg mirrors (/spl lambda/=1.55 /spl mu/m) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations.


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    Title :

    Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 /spl mu/m VCSELs


    Contributors:
    Gebretsadik, H. (author) / Kamath, K. (author) / Linder, K. (author) / Bhattacharya, P. (author) / Caneau, C. (author) / Bhat, R. (author)


    Publication date :

    1997-01-01


    Size :

    277899 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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