We demonstrate here the MBE growth of GaAs-AlAs /spl lambda//4 Bragg mirrors (/spl lambda/=1.55 /spl mu/m) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations.
Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 /spl mu/m VCSELs
1997-01-01
277899 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1997
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