We demonstrate here the MBE growth of GaAs-AlAs /spl lambda//4 Bragg mirrors (/spl lambda/=1.55 /spl mu/m) on patterned InP-based quantum well vertical cavity surface-emitting lasers (VCSEL) heterostructures, with misfit of 3.7%, without the generation of misfit dislocations.


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    Titel :

    Defect-free GaAs/AlAs distributed Bragg reflector mirrors an patterned InP-based heterostructures: application to 1.55 /spl mu/m VCSELs


    Beteiligte:
    Gebretsadik, H. (Autor:in) / Kamath, K. (Autor:in) / Linder, K. (Autor:in) / Bhattacharya, P. (Autor:in) / Caneau, C. (Autor:in) / Bhat, R. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    277899 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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