Summary form only given. High-power mid-infrared semiconductor lasers emitting between 2 and 5 /spl mu/m are desirable for military applications such as infrared countermeasures. At 2 /spl mu/m, high cw power greater than 1 W has been obtained at room temperature for GaInAsSb-AlGaAsSb strained quantum-well diode lasers.


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    Title :

    High-power mid-infrared semiconductor lasers


    Contributors:
    Choi, H.K. (author) / Turner, G.W. (author) / Le, H.Q. (author)


    Publication date :

    1997-01-01


    Size :

    80196 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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