Summary form only given. High-power mid-infrared semiconductor lasers emitting between 2 and 5 /spl mu/m are desirable for military applications such as infrared countermeasures. At 2 /spl mu/m, high cw power greater than 1 W has been obtained at room temperature for GaInAsSb-AlGaAsSb strained quantum-well diode lasers.
High-power mid-infrared semiconductor lasers
1997-01-01
80196 byte
Conference paper
Electronic Resource
English
High-Power Mid-Infrared Semiconductor Lasers
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