Summary form only given. High-power mid-infrared semiconductor lasers emitting between 2 and 5 /spl mu/m are desirable for military applications such as infrared countermeasures. At 2 /spl mu/m, high cw power greater than 1 W has been obtained at room temperature for GaInAsSb-AlGaAsSb strained quantum-well diode lasers.
High-power mid-infrared semiconductor lasers
01.01.1997
80196 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High-Power Mid-Infrared Semiconductor Lasers
British Library Conference Proceedings | 1997
|High Power Semiconductor Disk Lasers
IEEE | 2005
|High power interminiband superlattice infrared lasers
IEEE | 1997
|High-power monolithic semiconductor diode lasers
IEEE | 2003
|Semiconductor Lasers: High-power diode lasers tune into diverse applications
British Library Online Contents | 1995