We fabricated GaInAsP lasers with a semiconductor/air DBR by the ICP etching and obtained the normalized lasing threshold of 3 mA//spl mu/m. The FDTD simulation indicates that the crucial factor for high reflectivity is the sidewall angle much higher than 85 degrees. Now, we are optimizing the inductively coupled plasma (ICP) condition for high yield fabrication of the vertical DBR.


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    Title :

    Low threshold GaInAsP lasers with semiconductor/air DBR fabricated by inductively coupled plasma etching


    Contributors:
    Ariga, M. (author) / Sekido, Y. (author) / Sakai, A. (author) / Baba, T. (author) / Matsutani, A. (author) / Koyama, F. (author) / Iga, K. (author)


    Publication date :

    1999-01-01


    Size :

    166641 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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