A RT-CW operation of GaInAsP/InP 5-stacked quantum-wire lasers (23 nm wide) fabricated by EB lithography, CH/sub 4//H/sub 2/-RIE and OMVPE regrowth was achieved. No significant changes in performance were observable even after 7100 h under the RT-CW condition.


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    Title :

    Reliable RT CW operation of GaInAsP/InP multiple-quantum-wire lasers fabricated by dry etching and regrowth method


    Contributors:
    Yagi, H. (author) / Sano, T. (author) / Ohira, K. (author) / Plumwongrot, D. (author) / Maruyama, T. (author) / Haque, A. (author) / Arai, S. (author)


    Publication date :

    2004-01-01


    Size :

    169619 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English