A RT-CW operation of GaInAsP/InP 5-stacked quantum-wire lasers (23 nm wide) fabricated by EB lithography, CH/sub 4//H/sub 2/-RIE and OMVPE regrowth was achieved. No significant changes in performance were observable even after 7100 h under the RT-CW condition.
Reliable RT CW operation of GaInAsP/InP multiple-quantum-wire lasers fabricated by dry etching and regrowth method
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 2 ; 2 pp. vol.2
2004-01-01
169619 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2001
|Fabrication and Characterization of GaInASP/InP Long Wavelength Quantum-Wire Lasers
British Library Conference Proceedings | 1997
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