We report on the properties of blue InGaN MQW laser diodes fabricated using reactive ion etched facets on c-plane sapphire and cleaved facets on a-plane sapphire. We have also investigated the use of silicon doping in the quantum wells for the etched facet lasers.
Blue InGaN MQW laser diodes on sapphire
1998-01-01
141310 byte
Conference paper
Electronic Resource
English
Blue InGaN MQW Laser Diodes on Sapphire
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