We report on the properties of blue InGaN MQW laser diodes fabricated using reactive ion etched facets on c-plane sapphire and cleaved facets on a-plane sapphire. We have also investigated the use of silicon doping in the quantum wells for the etched facet lasers.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Blue InGaN MQW laser diodes on sapphire


    Contributors:
    DenBaars, S.P. (author) / Abare, A.C. (author) / Mack, M.P. (author) / Hansen, M. (author) / Sink, R.K. (author) / Kozodoy, P. (author) / Keller, S. (author) / Speck, J.S. (author) / Bowers, J.E. (author) / Mishra, U.K. (author)


    Publication date :

    1998-01-01


    Size :

    141310 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Blue InGaN MQW Laser Diodes on Sapphire

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate

    Sheng, Y. / Xia, C. S. / Simon Li, Z. M. et al. | British Library Online Contents | 2013


    Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate

    Xia, C. S. / Li, Z. M. / Sheng, Y. et al. | British Library Online Contents | 2015


    InGaN laser diodes fabricated by MBE

    Heffernan, J. / Kauer, M. / Johnson, K. et al. | IEEE | 2004


    InGaN Laser Diodes Fabricated by MBE

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004