We report on the properties of blue InGaN MQW laser diodes fabricated using reactive ion etched facets on c-plane sapphire and cleaved facets on a-plane sapphire. We have also investigated the use of silicon doping in the quantum wells for the etched facet lasers.
Blue InGaN MQW laser diodes on sapphire
01.01.1998
141310 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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