We report on the properties of blue InGaN MQW laser diodes fabricated using reactive ion etched facets on c-plane sapphire and cleaved facets on a-plane sapphire. We have also investigated the use of silicon doping in the quantum wells for the etched facet lasers.


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    Titel :

    Blue InGaN MQW laser diodes on sapphire


    Beteiligte:
    DenBaars, S.P. (Autor:in) / Abare, A.C. (Autor:in) / Mack, M.P. (Autor:in) / Hansen, M. (Autor:in) / Sink, R.K. (Autor:in) / Kozodoy, P. (Autor:in) / Keller, S. (Autor:in) / Speck, J.S. (Autor:in) / Bowers, J.E. (Autor:in) / Mishra, U.K. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    141310 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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