Summary form only given. We present results for multi-stage, multi-color infrared LEDs where each stage has a separate semimetal injector, and the composition of the strained InAsSb multi-quantum well active region differs in each stage. To demonstrate the feasibility of a semimetal injection laser, we have constructed a single-stage laser emitting at 3.9 /spl mu/m at 210 K.


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    Title :

    Advances in InAsSb-based mid-infrared lasers and LEDs, grown by MOCVD


    Contributors:


    Publication date :

    1997-01-01


    Size :

    131393 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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