Summary form only given. We present results for multi-stage, multi-color infrared LEDs where each stage has a separate semimetal injector, and the composition of the strained InAsSb multi-quantum well active region differs in each stage. To demonstrate the feasibility of a semimetal injection laser, we have constructed a single-stage laser emitting at 3.9 /spl mu/m at 210 K.
Advances in InAsSb-based mid-infrared lasers and LEDs, grown by MOCVD
1997-01-01
131393 byte
Conference paper
Electronic Resource
English
Advances in InAsSb-Based Mid-Infrared Lasers and LEDs, Grown by MOCVD
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