Summary form only given. We present results for multi-stage, multi-color infrared LEDs where each stage has a separate semimetal injector, and the composition of the strained InAsSb multi-quantum well active region differs in each stage. To demonstrate the feasibility of a semimetal injection laser, we have constructed a single-stage laser emitting at 3.9 /spl mu/m at 210 K.


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    Titel :

    Advances in InAsSb-based mid-infrared lasers and LEDs, grown by MOCVD


    Beteiligte:
    Kurtz, S.R. (Autor:in) / Allerman, A.A. (Autor:in) / Biefeld, R.M. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    131393 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Advances in InAsSb-Based Mid-Infrared Lasers and LEDs, Grown by MOCVD

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


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    Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD

    Razeghi, M. / Choi, Y. H. / Kim, J. D. et al. | British Library Conference Proceedings | 1995


    InAsSb heterojunction photodiodes grown by liquid phase epitaxy [3179-43]

    Rutkowski, J. / Raczynska, J. / Rogalski, A. et al. | British Library Conference Proceedings | 1996