Summary form only given. In summary, very low threshold current etched-pillar InGaAs DBR QW VCSELs have been fabricated using AlAs-oxidation. Monotonically decreasing threshold currents were observed for down to very small area devices, indicating suppression of diameter dependent, optical scattering loss caused by etched-pillar sidewalls.


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    Title :

    Reduced threshold bottom emitting vertical cavity lasers by AlAs oxidation


    Contributors:
    Floyd, P.D. (author) / Thibeault, B.J. (author) / Coldren, L.A. (author) / Merz, J.L. (author)


    Publication date :

    1995-01-01


    Size :

    172688 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Reduced Threshold Bottom Emitting Vertical Cavity Lasers by AlAs Oxidation

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995




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    Singh, B. P. / Sato, N. / Narazaki, W. et al. | British Library Conference Proceedings | 1997